Carrier recombination parameters in diamond after surface boron implantation and annealing / P. Grivickas, P. Ščajev, N. Kazuchits, A. Mazanik, O. Korolik, L.F. Voss, A.M. Conway, D.L. Hall, M. Bora, L. Subačius, V. Bikbajevas, V. Grivickas // J. Appl. Phys. – 2020. – Vol. 127. – P. 245707 (6 p.);
Low temperature injected-caused charge carrier instability in n-type silicon below insulator-to-metal transition / A.L. Danilyuk, S.L. Prischepa, A.G. Trafimenko, A.K. Fedotov, I.A. Svito, N.I. Kargin // Journal of Physics: Condensed Matter. – 2020. – Vol. 32. – 225702.
Temperature dependence of Raman scattering in the Cu2ZnSnSe4 thin films on a Ta foil substrate / A.V. Stanchik, M.S. Tivanov, I.I. Tyukhov, R. Juskenas, O.V. Korolik, V.F. Gremenok, A.M. Saad, A. Naujokaitis// Solar Energy. – 2020. – Vol. 201. – P. 480–488.
/ N.M. Kazuchits, O.V. Korolik, M.S. Rusetsky, V.N. Kazuchits, N.S. Kirilkin, V.A. Skuratov// Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. – 2020. – Vol. 472. – P. 19–23
Determination of carrier lifetime in thermally evaporated In2S3 thin films by light induced transient grating technique / S. Rasool, P. Ščajev, K. Saritha, I. Svito, K. T. Ramakrishna Reddy, M. S. Tivanov, V. Grivickas// Applied Physics A. – 2020. – Vol. 126. – Article number 312.
Nitrogen-doped CVD diamond: Nitrogen concentration, color and internal stress / A.M.Zaitsev, N.M.Kazuchits, V.N.Kazuchits, K.S.Moe, M.S.Rusetsky, O.V.Korolik, Kouki Kitajima, J.E.Butler, W.Wang // Diamond and Related Materials. – 2020. – Vol. 105. – P. 107794.
Annealing and plasma treatment effect on structural, morphological and topographical properties of evaporated β-In2S3 films / S. Rasool, K. Saritha, K. T. Ramakrishna Reddy, M. S. Tivanov, V. F. Gremenok, S. P. Zimin, A. S. Pipkova, L. A. Mazaletskiy and I. I. Amirov // Materials Research Express – 2020. – Volume 7, Number 1 – Pages 016431.